Nonvolatile resistive switching in lead-free La2CoMnO6-based memory device

Autor:	Lv, Fengzhen, Qin, Yongfu, Gao, Yuan, Huang, Fangfang, Tang, Huimin, Liu, Jun, Long, Lizhen, Yang, Yong
Zdroj:	In Materials Today Communications August 2023 36
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect