Nonvolatile resistive switching in lead-free La2CoMnO6-based memory device

Autor: Lv, Fengzhen, Qin, Yongfu, Gao, Yuan, Huang, Fangfang, Tang, Huimin, Liu, Jun, Long, Lizhen, Yang, Yong
Zdroj: In Materials Today Communications August 2023 36
Databáze: ScienceDirect
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