Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence

Autor: Hasegawa, Sho, Hasuike, Noriyuki, Kanegae, Kazutaka, Nishinaka, Hiroyuki, Yoshimoto, Masahiro
Zdroj: In Materials Science in Semiconductor Processing 1 August 2023 162
Databáze: ScienceDirect