Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence
| Autor: | Hasegawa, Sho a, ∗, Hasuike, Noriyuki b, Kanegae, Kazutaka b, Nishinaka, Hiroyuki b, Yoshimoto, Masahiro b, ∗∗ |
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| Zdroj: | In Materials Science in Semiconductor Processing 1 August 2023 162 |
| Databáze: | ScienceDirect |
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