Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

Autor: Hernández-Saz, J. a, *, Herrera, M. a, Molina, S.I. a, Stanley, C.R. b, Duguay, S. c
Zdroj: In Acta Materialia 15 January 2016 103:651-657
Databáze: ScienceDirect