Memory effects in MOS devices based on Si quantum dots
| Autor: | Crupi, I *, Corso, D, Lombardo, S, Gerardi, C, Ammendola, G, Nicotra, G, Spinella, C, Rimini, E, Melanotte, M |
|---|---|
| Zdroj: | In Materials Science & Engineering C 15 January 2003 23(1-2):33-36 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect