Role of Ga 2O 3–In 2O 3–ZnO channel composition on the electrical performance of thin-film transistors
Autor: | Olziersky, A., Barquinha, P., Vilà, A., Magaña, C., Fortunato, E., Morante, J.R., Martins, R. |
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Zdroj: | In Materials Chemistry and Physics 2011 131(1):512-518 |
Databáze: | ScienceDirect |
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