Role of Ga 2O 3–In 2O 3–ZnO channel composition on the electrical performance of thin-film transistors

Autor: Olziersky, A., Barquinha, P., Vilà, A., Magaña, C., Fortunato, E., Morante, J.R., Martins, R.
Zdroj: In Materials Chemistry and Physics 2011 131(1):512-518
Databáze: ScienceDirect