Dilute GaAs1−xBix epilayers with different bismuth concentrations grown by Molecular Beam Epitaxy: A promising candidate for gamma radiation sensor applications
Autor: | Alhassni, Amra A., Felix, Jorlandio F., Marroquin, John Fredy R., Alhassan, Sultan, Alghamdi, Haifa, Almunyif, Amjad, de Azevedo, Walter M., Lunz, Juliana, Archanjo, Braulio S., Henini, Mohamed |
---|---|
Zdroj: | In Applied Surface Science 1 November 2023 636 |
Databáze: | ScienceDirect |
Externí odkaz: |