Dilute GaAs1−xBix epilayers with different bismuth concentrations grown by Molecular Beam Epitaxy: A promising candidate for gamma radiation sensor applications

Autor: Alhassni, Amra A., Felix, Jorlandio F., Marroquin, John Fredy R., Alhassan, Sultan, Alghamdi, Haifa, Almunyif, Amjad, de Azevedo, Walter M., Lunz, Juliana, Archanjo, Braulio S., Henini, Mohamed
Zdroj: In Applied Surface Science 1 November 2023 636
Databáze: ScienceDirect