Temperature dependence of the c-axis drift mobility in 4H–SiC
Autor: | Galvagno, G., Roccaforte, F., Ruggiero, A., Calcagno, L., Zanetti, E., Saggio, M., Portuese, F., La Via, F. |
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Zdroj: | In Microelectronic Engineering 2006 83(1):45-47 |
Databáze: | ScienceDirect |
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