Temperature dependence of the c-axis drift mobility in 4H–SiC

Autor: Galvagno, G., Roccaforte, F., Ruggiero, A., Calcagno, L., Zanetti, E., Saggio, M., Portuese, F., La Via, F.
Zdroj: In Microelectronic Engineering 2006 83(1):45-47
Databáze: ScienceDirect