Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices
Autor: | Fernandes Paes Pinto Rocha, P., Vauche, L., Bedjaoui, M., Cadot, S., Mohamad, B., Vandendaele, W., Martinez, E., Gauthier, N., Pierre, F., Grampeix, H., Lefèvre, G., Salem, B., Sousa, V. |
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Zdroj: | In Solid State Electronics November 2023 209 |
Databáze: | ScienceDirect |
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