Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices

Autor: Fernandes Paes Pinto Rocha, P., Vauche, L., Bedjaoui, M., Cadot, S., Mohamad, B., Vandendaele, W., Martinez, E., Gauthier, N., Pierre, F., Grampeix, H., Lefèvre, G., Salem, B., Sousa, V.
Zdroj: In Solid State Electronics November 2023 209
Databáze: ScienceDirect