Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices

Autor:	Fernandes Paes Pinto Rocha, P. a, b, ⁎, Vauche, L. a, Bedjaoui, M. a, Cadot, S. a, Mohamad, B. a, Vandendaele, W. a, Martinez, E. a, Gauthier, N. a, Pierre, F. a, Grampeix, H. a, Lefèvre, G. b, Salem, B. b, Sousa, V. a
Zdroj:	In Solid State Electronics November 2023 209
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect