Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation

Autor: Ioannou-Sougleridis, Vassilios, Poulakis, Nikolaos, Dimitrakis, Panagiotis, Normand, Pascal, Patsis, George P., Dimoulas, Athanasios, Simoen, Eddy
Zdroj: In Solid State Electronics March 2013 81:19-26
Databáze: ScienceDirect