Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation
Autor: | Ioannou-Sougleridis, Vassilios, Poulakis, Nikolaos, Dimitrakis, Panagiotis, Normand, Pascal, Patsis, George P., Dimoulas, Athanasios, Simoen, Eddy |
---|---|
Zdroj: | In Solid State Electronics March 2013 81:19-26 |
Databáze: | ScienceDirect |
Externí odkaz: |