DC and 1/ f noise characteristics of strained-Si nMOSFETs using chemical–mechanical-polishing technique
Autor: | Lin, Hau Yu, Wu, San Lein, Chang, Shoou Jinn, Kuo, Cheng Wen, Wang, Yen Ping, Hung, Shang Chao |
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Zdroj: | In Solid State Electronics 2009 53(8):905-908 |
Databáze: | ScienceDirect |
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