DC and 1/ f noise characteristics of strained-Si nMOSFETs using chemical–mechanical-polishing technique

Autor: Lin, Hau Yu, Wu, San Lein, Chang, Shoou Jinn, Kuo, Cheng Wen, Wang, Yen Ping, Hung, Shang Chao
Zdroj: In Solid State Electronics 2009 53(8):905-908
Databáze: ScienceDirect