Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs
| Autor: | Simoen, E., Claeys, C., Lukyanchikova, N., Garbar, N., Smolanka, A., Ghedini Der Agopian, P., Martino, J.A. |
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| Zdroj: | In Solid State Electronics 2006 50(1):52-57 |
| Databáze: | ScienceDirect |
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