Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs
| Autor: | Simoen, E. a, ⁎, Claeys, C. a, b, Lukyanchikova, N. c, Garbar, N. c, Smolanka, A. c, Ghedini Der Agopian, P. d, Martino, J.A. d, e |
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| Zdroj: | In Solid State Electronics 2006 50(1):52-57 |
| Databáze: | ScienceDirect |
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