Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation

Autor: Eminente, Simone a, Alessandrini, Marco a, Fiegna, Claudio a, b, ∗
Zdroj: In Solid State Electronics 2004 48(4):543-549
Databáze: ScienceDirect