High resolution physical analysis of ohmic contact formation at GaN-HEMT devices
| Autor: | Graff, A., Simon-Najasek, M., Altmann, F., Kuzmik, J., Gregušová, D., Haščík, Š., Jung, H., Baur, T., Grünenpütt, J., Blanck, H. |
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| Zdroj: | In Microelectronics Reliability September 2017 76-77:338-343 |
| Databáze: | ScienceDirect |
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