High resolution physical analysis of ohmic contact formation at GaN-HEMT devices
| Autor: | Graff, A. a, ⁎, Simon-Najasek, M. a, Altmann, F. a, Kuzmik, J. b, Gregušová, D. b, Haščík, Š. b, Jung, H. c, Baur, T. c, Grünenpütt, J. c, Blanck, H. c |
|---|---|
| Zdroj: | In Microelectronics Reliability September 2017 76-77:338-343 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect