Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

Autor: Hu, J., Stoffels, S., Lenci, S., Ronchi, N., Venegas, R., You, S., Bakeroot, B., Groeseneken, G., Decoutere, S.
Zdroj: In Microelectronics Reliability September-October 2014 54(9-10):2196-2199
Databáze: ScienceDirect