Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Autor: Bassim, N.D., Twigg, M.E., Mastro, M.A., Eddy, C.R., Jr., Zega, T.J., Henry, R.L., Culbertson, J.C., Holm, R.T., Neudeck, P., Powell, J.A., Trunek, A.J.
Zdroj: In Journal of Crystal Growth 2007 304(1):103-107
Databáze: ScienceDirect