Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps
Autor: | Bassim, N.D., Twigg, M.E., Mastro, M.A., Eddy, C.R., Jr., Zega, T.J., Henry, R.L., Culbertson, J.C., Holm, R.T., Neudeck, P., Powell, J.A., Trunek, A.J. |
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Zdroj: | In Journal of Crystal Growth 2007 304(1):103-107 |
Databáze: | ScienceDirect |
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