In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control

Autor: Bonanni, A. *, Stifter, D., Montaigne-Ramil, A., Schmidegg, K., Hingerl, K., Sitter, H.
Zdroj: In Journal of Crystal Growth 2003 248:211-215
Databáze: ScienceDirect