In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control
Autor: | Bonanni, A. *, Stifter, D., Montaigne-Ramil, A., Schmidegg, K., Hingerl, K., Sitter, H. |
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Zdroj: | In Journal of Crystal Growth 2003 248:211-215 |
Databáze: | ScienceDirect |
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