Device-grade a-SiGe:H alloys prepared by nanometer deposition/H 2 plasma annealing method

Autor: Xu, Jun, Shiba, Kazutoshi, Miyazaki, Seiichi, Hirose, Masataka, Chen, Kunji, Feng, Duan
Zdroj: In Journal of Non-Crystalline Solids 1996 198 Part 1:582-586
Databáze: ScienceDirect