Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

Autor: Shaoyang Tan, Mengdie Sun, Dan Lu, Ruikang Zhang, Wei Wang, Chen Ji
Jazyk: angličtina
Rok vydání: 2015
Předmět:
Zdroj: IEEE Photonics Journal, Vol 7, Iss 5, Pp 1-7 (2015)
Druh dokumentu: article
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2015.2483203
Popis: We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics are both observed for this device. An on-state optical output power of 98 mW and an on-off extinction ratio of 22 dB were demonstrated between the bistable states. A qualitative physical model based on carrier population profile shift is used to explain the switching effect. Optical flip-flop operation was also demonstrated.
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