Autor: |
Shaoyang Tan, Mengdie Sun, Dan Lu, Ruikang Zhang, Wei Wang, Chen Ji |
Jazyk: |
angličtina |
Rok vydání: |
2015 |
Předmět: |
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Zdroj: |
IEEE Photonics Journal, Vol 7, Iss 5, Pp 1-7 (2015) |
Druh dokumentu: |
article |
ISSN: |
1943-0655 |
DOI: |
10.1109/JPHOT.2015.2483203 |
Popis: |
We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics are both observed for this device. An on-state optical output power of 98 mW and an on-off extinction ratio of 22 dB were demonstrated between the bistable states. A qualitative physical model based on carrier population profile shift is used to explain the switching effect. Optical flip-flop operation was also demonstrated. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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