| Autor: |
Abu Naim R. Ahmed, Shouyuan Shi, Andrew Mercante, Sean Nelan, Peng Yao, Dennis W. Prather |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
APL Photonics, Vol 5, Iss 9, Pp 091302-091302-8 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2378-0967 |
| DOI: |
10.1063/5.0020040 |
| Popis: |
This paper reports a hybrid silicon nitride–lithium niobate electro-optic Mach–Zehnder-interferometer modulator that demonstrates overall improvements in terms of half-wave voltage, optical insertion loss, extinction ratio, and operational bandwidth. The fabricated device exhibits a DC half-wave voltage of ∼1.3 V, a static extinction ratio of ∼27 dB, an on-chip optical loss of ∼1.53 dB, and a 3 dB electro-optic bandwidth of 29 GHz. In addition, this device operates beyond the 3 dB bandwidth, where a half-wave voltage of 3 V is extracted at 40 GHz when the device is biased at quadrature. The modulator is realized by strip-loading thin-film lithium niobate with low-pressure chemical vapor deposited silicon nitride; this enables reduced on-chip losses and allows for a lengthened 2.4 cm long interaction region that is specifically engineered for broadband performance. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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