Electrostically defined few-electron double quantum dot in silicon

Autor:	Lim, W. H., Huebl, H., van Beveren, L. H. Willems, Rubanov, S., Spizzirri, P. G., Angus, S. J., Clark, R. G., Dzurak, A. S.
Rok vydání:	2009
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Appl. Phys. Lett. 94, 173502 (2009)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.3124242
Popis:	A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements. Comment: 4 pages, 3 figures, accepted for Applied Physics Letters
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0904.0311 Zobrazit plný text záznamu View this record from Arxiv