| Autor: |
L.K. Hanes, L.D. Reynolds, J.L. Vorhaus, R. Mozzi, Y. Ayasli |
| Rok vydání: |
1984 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Microwave Theory and Techniques. 32:290-295 |
| ISSN: |
0018-9480 |
| DOI: |
10.1109/tmtt.1984.1132667 |
| Popis: |
Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolithic GaAs traveling-wave power amplifier with over 250-mW power output in the 2-20-GHz frequency range is described. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
