2-20-GHz GaAs Traveling-Wave Power Amplifier

Autor:	L.K. Hanes, L.D. Reynolds, J.L. Vorhaus, R. Mozzi, Y. Ayasli
Rok vydání:	1984
Předmět:	Power gain Physics Power-added efficiency Radiation FET amplifier business.industry Amplifier RF power amplifier Electrical engineering Power bandwidth Condensed Matter Physics Linear amplifier Optoelectronics Electrical and Electronic Engineering business Direct-coupled amplifier
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 32:290-295
ISSN:	0018-9480
DOI:	10.1109/tmtt.1984.1132667
Popis:	Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolithic GaAs traveling-wave power amplifier with over 250-mW power output in the 2-20-GHz frequency range is described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58e7f4fa60138161ae970f146b9a9bbf https://doi.org/10.1109/tmtt.1984.1132667 Zobrazit plný text záznamu