Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Autor: Shui-Jinn Wang, Rong-Ming Ko, Hsiang Yi Chen, Zhi-Kai Zhuang, Sheng Tsang Hsiao, Bing Cheng You, Chun Kai Liao, Sheng Yi Wang
Rok vydání: 2018
Předmět:
Zdroj: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2018.ps-10-04
Databáze: OpenAIRE