Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric
Autor: | Shui-Jinn Wang, Rong-Ming Ko, Hsiang Yi Chen, Zhi-Kai Zhuang, Sheng Tsang Hsiao, Bing Cheng You, Chun Kai Liao, Sheng Yi Wang |
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Rok vydání: | 2018 |
Předmět: | |
Zdroj: | Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials. |
DOI: | 10.7567/ssdm.2018.ps-10-04 |
Databáze: | OpenAIRE |
Externí odkaz: |