| Autor: |
Cécile Gourgon, A. Andrei, Masumi Suetsugu, Murielle Charpin, S. Tedesco, Ryotaro Hanawa, Tadashi Kusumoto, Daniel Henry, Yves Laplanche, Laurent Pain, H. Yokoyama |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.474193 |
| Popis: |
In this study, it is investigated how chemical modifications of a given resist platform can induce improvements in e-beam lithographic performances. Molecular weight (Mw) as well as photo-acid generator (PAG) modifications will act as fine tuners for Sumitomo NEB-33 negative resist to match specific applications: preparation of advanced CMOS R&D architecture (highly resolving resists needed) and fast patterning for production environment (highly sensitive resists needed). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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