Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)

Autor: Cécile Gourgon, A. Andrei, Masumi Suetsugu, Murielle Charpin, S. Tedesco, Ryotaro Hanawa, Tadashi Kusumoto, Daniel Henry, Yves Laplanche, Laurent Pain, H. Yokoyama
Rok vydání: 2002
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
Popis: In this study, it is investigated how chemical modifications of a given resist platform can induce improvements in e-beam lithographic performances. Molecular weight (Mw) as well as photo-acid generator (PAG) modifications will act as fine tuners for Sumitomo NEB-33 negative resist to match specific applications: preparation of advanced CMOS R&D architecture (highly resolving resists needed) and fast patterning for production environment (highly sensitive resists needed).
Databáze: OpenAIRE