Oscillatory Magnetoconductance ofp-Type Inversion Layers in Si Surfaces
Autor: | Amir A. Lakhani, Y. C. Cheng, P. J. Stiles |
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Rok vydání: | 1974 |
Předmět: | |
Zdroj: | Physical Review Letters. 32:1003-1006 |
ISSN: | 0031-9007 |
DOI: | 10.1103/physrevlett.32.1003 |
Popis: | We report the observation of Shubnikov-de Haas oscillations in the conductivity of surface holes in a $p$-type inversion layer of Si. The hole plasma is shown to be two dimensional. The effective mass varies from about $0.6{m}_{0}$ to $1{m}_{0}$ in the carrier concentration range (1 to 3.5) \ifmmode\times\else\texttimes\fi{} ${10}^{12}$ ${\mathrm{cm}}^{\ensuremath{-}2}$. It is proposed that the nonparabolic nature of Si valence band as well as many-body interaction affects the value of the effective mass. The hole gas is found to exist in one valley. Unexpected oscillations in the conductivity at low carrier concentration (less than 8 \ifmmode\times\else\texttimes\fi{} ${10}^{11}$ ${\mathrm{cm}}^{\ensuremath{-}2}$) are reported. |
Databáze: | OpenAIRE |
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