| Autor: |
Amir A. Lakhani, Y. C. Cheng, P. J. Stiles |
| Rok vydání: |
1974 |
| Předmět: |
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| Zdroj: |
Physical Review Letters. 32:1003-1006 |
| ISSN: |
0031-9007 |
| DOI: |
10.1103/physrevlett.32.1003 |
| Popis: |
We report the observation of Shubnikov-de Haas oscillations in the conductivity of surface holes in a $p$-type inversion layer of Si. The hole plasma is shown to be two dimensional. The effective mass varies from about $0.6{m}_{0}$ to $1{m}_{0}$ in the carrier concentration range (1 to 3.5) \ifmmode\times\else\texttimes\fi{} ${10}^{12}$ ${\mathrm{cm}}^{\ensuremath{-}2}$. It is proposed that the nonparabolic nature of Si valence band as well as many-body interaction affects the value of the effective mass. The hole gas is found to exist in one valley. Unexpected oscillations in the conductivity at low carrier concentration (less than 8 \ifmmode\times\else\texttimes\fi{} ${10}^{11}$ ${\mathrm{cm}}^{\ensuremath{-}2}$) are reported. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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