Position-controlled carbon nanotube FETs fabricated by CVD synthesis using patterned metal catalyst

Autor: Hisanori Shinohara, Shigeru Kishimoto, Toshiya Okazaki, Yutaka Ohno, Shinya Iwatsuki, T. Hiraoka, Takashi Mizutani, Koichi Maezawa
Rok vydání: 2003
Předmět:
Zdroj: 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..
DOI: 10.1109/imnc.2002.1178532
Popis: Carbon nanotube (CNT) devices receive much attention from both physical and technological points of view because of the ideal one-dimensional structure, nano-size dimension, and ultra-low power dissipation. In order to realize CNT integrated circuits, it is important to fabricate CNT field-effect transistors (FETs) at designed positions. In this work, we fabricated position-controlled CNT FETs by chemical vapor deposition (CVD) synthesis using metal catalysts patterned on a silicon wafer. Good FET operations have been obtained.
Databáze: OpenAIRE