Autor: |
Hisanori Shinohara, Shigeru Kishimoto, Toshiya Okazaki, Yutaka Ohno, Shinya Iwatsuki, T. Hiraoka, Takashi Mizutani, Koichi Maezawa |
Rok vydání: |
2003 |
Předmět: |
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Zdroj: |
2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers.. |
DOI: |
10.1109/imnc.2002.1178532 |
Popis: |
Carbon nanotube (CNT) devices receive much attention from both physical and technological points of view because of the ideal one-dimensional structure, nano-size dimension, and ultra-low power dissipation. In order to realize CNT integrated circuits, it is important to fabricate CNT field-effect transistors (FETs) at designed positions. In this work, we fabricated position-controlled CNT FETs by chemical vapor deposition (CVD) synthesis using metal catalysts patterned on a silicon wafer. Good FET operations have been obtained. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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