High-gain lateral bipolar action in a MOSFET structure
| Autor: | P.K. Ko, S. Simon Wong, S. Verdonckt-Vandebroek, Jason C. S. Woo |
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| Rok vydání: | 1991 |
| Předmět: |
High-gain antenna
Materials science business.industry Circuit design Bipolar junction transistor Transistor Electrical engineering Liquid nitrogen Electronic Optical and Magnetic Materials law.invention CMOS law MOSFET Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 38:2487-2496 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.97413 |
| Popis: | A hybrid-mode device based on a standard submicrometer CMOS technology is presented. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral bipolar junction transistor (BJT). At low collector current levels, lateral bipolar action with a current gain higher than 1000 is achieved. No additional processing steps are needed to obtain the BJT when the MOSFET is properly designed. n-p-n BJTs with a 0.25- mu m base width have been successfully fabricated in a p-well 0.25- mu m bulk n-MOSFET process. The electrical characteristics of the n-MOSFET and the lateral n-p-n BJT at room and liquid nitrogen temperatures are reported. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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