A Framework for Sensitive Assessment of Plasma Process-Induced Damage in Si Substrates

Autor:	Takashi Hamano, Keiichiro Urabe, Koji Eriguchi
Rok vydání:	2020
Zdroj:	Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e6e5541087221790a43feda93ad5a641 https://doi.org/10.7567/ssdm.2020.k-1-04 Zobrazit plný text záznamu