A Framework for Sensitive Assessment of Plasma Process-Induced Damage in Si Substrates

Autor: Takashi Hamano, Keiichiro Urabe, Koji Eriguchi
Rok vydání: 2020
Zdroj: Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2020.k-1-04
Databáze: OpenAIRE