A Framework for Sensitive Assessment of Plasma Process-Induced Damage in Si Substrates
Autor: | Takashi Hamano, Keiichiro Urabe, Koji Eriguchi |
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Rok vydání: | 2020 |
Zdroj: | Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials. |
DOI: | 10.7567/ssdm.2020.k-1-04 |
Databáze: | OpenAIRE |
Externí odkaz: |