| Autor: |
L.‐M. Buchmann, M. Torkler, W. H. Bruenger, W. Finkelstein |
| Rok vydání: |
1997 |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2355 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.589645 |
| Popis: |
The positive tone deep ultraviolet resist UV II HS-0.6 (Shipley) has been evaluated for ion exposure in the ion projector at the Fraunhofer Institute in Berlin. The chemically amplified resist showed extremely high sensitivity of 1×1012 H+ ions/cm2 at an ion energy of 75 keV. The contrast number was 11. Smallest lines with 65 nm linewidth could be delineated in 140-nm-high resist. At higher resist thickness of 370 nm, lines down to 70 nm were stable showing aspect ratios of >4. The exposure latitude at 100 nm nominal linewidth was ±10% dose variation for a ±10% linewidth change. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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