Chemically amplified deep ultraviolet resist for positive tone ion exposure

Autor:	L.‐M. Buchmann, M. Torkler, W. H. Bruenger, W. Finkelstein
Rok vydání:	1997
Předmět:	business.industry Chemistry General Engineering Analytical chemistry medicine.disease_cause Ion beam lithography Ion Laser linewidth Resist medicine Optoelectronics business Ion energy Exposure latitude Ultraviolet
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2355
ISSN:	0734-211X
DOI:	10.1116/1.589645
Popis:	The positive tone deep ultraviolet resist UV II HS-0.6 (Shipley) has been evaluated for ion exposure in the ion projector at the Fraunhofer Institute in Berlin. The chemically amplified resist showed extremely high sensitivity of 1×1012 H+ ions/cm2 at an ion energy of 75 keV. The contrast number was 11. Smallest lines with 65 nm linewidth could be delineated in 140-nm-high resist. At higher resist thickness of 370 nm, lines down to 70 nm were stable showing aspect ratios of >4. The exposure latitude at 100 nm nominal linewidth was ±10% dose variation for a ±10% linewidth change.
Databáze:	OpenAIRE
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