Automatic Image Analysis of Stackingfault

Autor:	Annamaria Muoio, Cristiano Calabretta, Viviana Scuderi, Massimo Zimbone, Francesco La Via
Rok vydání:	2022
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Condensed Matter Physics
Zdroj:	Materials Science Forum. 1062:283-287
ISSN:	1662-9752
DOI:	10.4028/p-ad93l3
Popis:	3C silicon carbide is a semiconductor with remarkable properties, making it ideal for the development of long lasting devices, working in harsh environments and under high particle flows. The most significant obstacle to its wider diffusion is the presence of extended, bidimensional and linear defects in its crystal lattice. The purpose of this research is to automatically recognize defects from a TEM image by algorithm that calculates distances and angles.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d682a75e257baa79de461cb111b42b05 https://doi.org/10.4028/p-ad93l3 Zobrazit plný text záznamu