Automatic Image Analysis of Stackingfault

Autor: Annamaria Muoio, Cristiano Calabretta, Viviana Scuderi, Massimo Zimbone, Francesco La Via
Rok vydání: 2022
Předmět:
Zdroj: Materials Science Forum. 1062:283-287
ISSN: 1662-9752
Popis: 3C silicon carbide is a semiconductor with remarkable properties, making it ideal for the development of long lasting devices, working in harsh environments and under high particle flows. The most significant obstacle to its wider diffusion is the presence of extended, bidimensional and linear defects in its crystal lattice. The purpose of this research is to automatically recognize defects from a TEM image by algorithm that calculates distances and angles.
Databáze: OpenAIRE